With the new, patented EDR analyser technology it is now possible to extend the dynamic range of the system and record intensities of more than 100 ions per pulse per mass with an excellent linearity and reproducibility.
The dynamic range is no longer limited by the single ion counting registration system.
To do this the EDR unit inside the analyser can send secondary ions of a specific mass through an attenuator before they reach the detector. The measured intensity is then multiplied by the attenuation factor.
The EDR technology is especially useful for MCs+ depth profiling applications.
The MCs+ mode has become very popular in TOF-SIMS because it provides more quantitative information.
With the EDR technology it is now possible to measure the very high Cs+ intensity. This allows to compensate matrix effects and achieve better quantification especially when multilayer systems are analysed.
MCs+ depth profile of a 40 keV Ge implant in silicon