Information about the chemical composition in 2D and 3D are of increasing interest. The TOF.SIMS 5 is a powerful tool to provide this kind of information on most sample systems. However, the 3D analysis of extremely rough samples, samples with voids, and samples that exhibit strong local variations in density or sputter yield is almost impossible for conventional SIMS depth profiling.
The option FIB ON GCS for the TOF.SIMS 5 allows to overcome these limitations by combining FIB with high resolution SIMS imaging. In this setup a mono-atomic Ga beam is used to FIB mill a crater into the sample.
The generated crater sidewall can then be imaged with the Bi Nanoprobe without moving the sample.
By serial slicing of the crater sidewall and intermediate imaging analysis full three-dimensional tomography measurements can be performed. For thin multilayer samples the FIB process can be performed under grazing incidence in order to bevel the surface and hence magnify and accentuate thin layers in the plane of the analysed crater wall. The comprehensive SurfaceLab software package provides full automation for entire slicing and analysis workflows.
Fully integrated hard and software solution
No sample movement between milling and imaging required
Real-time monitoring of the milling process
Automated 3D tomography support
No configuration compromises required
Full instrument configuration
Top view of a full instrument configuration of a TOF.SIMS 5 with Bi Nanoprobe, DSC-S with EI Source and Cs Source, Gas Cluster Source and FIB on GCS
Lithium ion battery analysis
FIB crater sidewall and surface image of a lithium ion battery showing the distribution of O (blue), F (green) and C (red)
Three-dimensional tomography analysis of a lithium ion battery showing the distribution of lithium (grey) and sodium (red)