|
|
 |
|
TOF-SIMS
TOF-SIMS is an acronym for the combination of
the analytical technique SIMS (Secondary Ion Mass Spectrometry) with Time of Flight mass analysis (TOF). In different operational modes - surface spectroscopy, surface imaging, depth profiling,
3D analysis - this analysis technique offers unique features:
| Information Obtained |
|
|
 |
|
detection of all elements and isotopes |
|
|
|
chemical information via molecular and
cluster ions |
|
| Detection Limits |
|
|
|
|
ppm of a monolayer for elements |
|
|
|
sub-fmol for molecules |
|
| Spatial Location |
|
|
|
|
high lateral resolution (< 60 nm) |
|
|
|
high surface sensitivity (< 1 nm) |
|
|
|
high depth resolution (< 1 nm)
|
LEIS
The significant advantages of low energy ion scattering (LEIS) are extreme surface sensitivity and quantification. Contrary to many other established surface analysis techniques such as XPS or AES, which generally integrate over several atomic layers, LEIS characterises individual atomic layers.
|
|
|
|
|
|
|
